Alkaidsemi SGT MOSFET series products are based on mature shielded gate trench technology. By optimizing the electric field distribution and trench structure, Rsp (on-resistance Ron* chip area) is significantly reduced, which is 30% lower than that of the previous generation. Combined with high power density packaging (such as DFN and TO series), higher power is output in the same volume, and the parallel connection requirement is reduced. At the same time, by optimizing the design of shielding grid, the grid charge Qg is greatly reduced and the charge Qrr is reversed, which is more conducive to reducing the turn-off loss and current spike and enhancing the stability of the whole system. Moreover, by optimizing the input capacitance ratio, the anti-crosstalk ability of the gate is strengthened, so that Miller crosstalk (gate voltage "secondary rebound") is not easy to occur, and the direct-through risk is reduced.
Product Features
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Low characteristic on-resistance Rsp (on-resistance Ron* chip area) to improve power density.
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Low quality factor FOM (on-resistance Ron* gate total charge Qg), reducing switching loss.
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Low reverse recovery charge Qrr, reducing turn-off loss
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Low reverse recovery current Irrm, reducing turn-off voltage stress
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High reliability, able to withstand higher avalanche breakdown and surge current.
Application Value
In the case of using the same package, the conduction loss is reduced by as much as 30% compared with the previous generation products.
◆ According to different applications, smaller packages can be used, and the Rdson of the same package is smaller.
◆ Large current output requires parallel MOSFET, which can reduce the number of parallel MOSFETs or even avoid parallel connection, occupying small PCB area and having great cost and volume advantages.
◆ Smaller reverse recovery current and voltage spike, reducing the oscillation during shutdown, which is beneficial to EMC.
Application Area
AI server power supply
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