With the rapid development of artificial intelligence, the amount of computing data has grown exponentially, and the demand for computing power has also experienced an explosive increase, driving the rapid expansion of electricity demand. As the core of energy consumption, the server power supply system is currently facing an industrial upgrading window period where "a mere 0.1% improvement in efficiency can save millions of yuan in operation and maintenance costs." Relying on its profound technical accumulation in power semiconductors across the entire platform and all product categories, YaoXin has established a power device matrix covering 25V-1500V by leveraging the three major technology platforms of SiC/SJ/SGT MOSFET, thus helping the AI data center industry achieve a "breakthrough in efficiency and performance."
Highlights of the Technology Platform
SGT products have world-class performance and multiple products are among the best in the industry
Represented by 25V, 30V, and 80V products, PDFN 5 * 6, a commonly used packaging for server power supplies, has achieved the industry's lowest Ron and best FOM (Ron · Qg), providing users with a complete domestic one-stop solution for further pursuing high energy efficiency. The entire family of platform models has made a grand debut, with typical product features as follows:
BIC：Best In Class
SiC MOS performance has significantly improved, setting an industry benchmark for energy efficiency
SJ deeply cultivates multi-layer epitaxial technology to achieve domestic substitution
Totem Pole PFC Revolution: SiC MOS Reconstructs Energy Efficiency Boundaries
Topological Evolutionary Logic
In the 3kW+high-power scenario, the traditional interleaved parallel Boost PFC topology has a bottleneck of 94% overall efficiency due to the large number of devices, complex control algorithms, and loss distribution. The totem pole architecture driven by Yaoxin G5 650V SiC MOSFET successfully broke through the 96% efficiency critical point through the "valley voltage turn-on" design, and the system loss was reduced by 62% compared to silicon-based SJ MOS at 400V bus voltage (third-party CNAS laboratory data).
AK1C65M033WAMH Performance Winning Points
• Thermal stability revolution: The innovative cellular structure achieves an RDS (ON) temperature rise coefficient of 144% at a junction temperature of 175 ℃ (compared to competitors who generally exceed 150%), making it possible to design a power density of 1kW/cm ³.
• Dynamic loss optimization with dual engines:
Qrr control technology: By precisely controlling the carrier lifetime, the reverse recovery charge is reduced by 30% (di/dt=1500A/us condition), and coupled with gate driven anti crosstalk design, the CCM mode switch loss is reduced by 28%.
Eoss energy storage optimization: The innovative structural design results in Eoss=12uJ when 400V is turned off, which is 40% lower than the same specification silicon-based SJ MOS and helps with high-frequency design.
Benchmark for measured data:
In the 3.3kW server power supply scheme, the LLC part is equipped with Yaoxin 600V 29m Ω SJ MOSFET, achieving a golden curve of overall efficiency of 96.58% @ 50% load and 95.77% @ 100% load, which is 0.2 percentage points higher than the schemes of top international manufacturers and 0.3 percentage points higher than those of mainstream domestic manufacturers. The annual energy saving is equivalent to reducing 12 tons of CO ₂ emissions (calculated based on 8kW cabinet operation for 24 hours).
SJ Technology Breakthrough: Reliability Revolution in Hard Switching Scenarios
G2.5 Super Junction Technology Breakthrough
Alkaidsemi continues to deepen its multi-layer epitaxial technology, optimize the charge storage and release characteristics of devices, reduce switch losses, and further suppress EMI.
AK3S60N355TMF 2kw CE text
Domestic competitor A 2kw CE testing
FOM leads in dual indicators: Ron·Qgd、Ron·Qrr， Leading domestic competitors and on par with top international manufacturers, it is particularly suitable for PFC level high-frequency hard switches and LLC resonant topology requirements.
Avalanche energy density increase: The single pulse UIS capability reaches 300mJ/cm ², meeting the requirements of IEC 61000-4-5 surge level four protection.
Body diode revolution: The fast recovery feature trr is less than 100ns, and Qrr is reduced by 10 times compared to traditional processes, ensuring stable and reliable LLC resonant topology start-up, empty and full load switching, short circuit and other complex working conditions.
Typical application verification
A leading ODM manufacturer has successfully replaced imported components with Yaoxin SJ MOSFET AK3S60N380WMF in the LLC position in a 2kW redundant power module, marking a technological breakthrough for domestic power devices in the high-end power supply market.
SGT product matrix: millimeter level power density battle
Breakthrough in hot swappable architecture
For Oring FET applications on 12V and 48V bus servers, the 25V, 30V, and 80V SGT series addresses core pain points through platform based technology layout
Ultra low conduction resistance: Further improvement in power density and efficiency
Low voltage high current SR application - efficiency challenge
For high-power density server power supplies, combined with LLC synchronous rectification soft switching technology, the problem of turn off losses and current spikes under high-frequency (>200kHz) operating conditions is solved, meeting the transient response requirements of GPU/CPU power supply.
• Gate charge (Qg) control: Optimize the shielding barrier structure to Qg@10V Reduced to 88nC (40% decrease compared to the previous generation), reduced driving losses, and supported higher frequency switching (measured loss reduction of 22% under 150kHz operating conditions).
• Reverse recovery charge (Qrr) suppression: By using carrier lifetime control technology, Qrr is reduced to 160nC (600A/us condition) to minimize the amplitude of current oscillation during the LLC resonance period.
• Miller capacitance ratio optimization: The Cgd/Cgs ratio decreased from 0.15 to 0.08 to avoid the risk of "secondary rebound" of gate voltage.
Ecological Co construction: Value Transmission from Devices to Systems
Spice simulation model: pre-set device loss distribution and thermal resistance model
Failure Mode Database: Failure Tree Analysis Covering 300+Actual Cases
Dynamic parameter testing report: Batch consistency data covering key parameters such as QG/Qrr/CoS (σ<1.75%)
PCB Layout Guide: Gate Loop Optimization Scheme for High Di/dt Scenarios
Alkaidsemi SGT MOSFET products have been imported into top server power supply manufacturers, with millions of units shipped, driving the continuous increase in the penetration rate of domestic power devices in the high-end market.
Technology leads, green energy builds foundation
Alkaidsemi takes full platform power devices as its core, providing a three in one solution of "efficiency+density+reliability" for AI data centers from material innovation to system collaboration. In the future, we will continue to deepen our cultivation of advanced power semiconductor technology, helping the global AI computing infrastructure accelerate towards the zero carbon goal.
