Honors and Awards | Alkaidsemi Wins Top 10 SiC Device Enterprise and Annual Excellent Product Award
Release time: 2025-12-05

Recently, the "2025 Silicon Carbide & Gallium Nitride Industry Summit Forum and Aurora Awards Ceremony", the mid-year conference of Expert Talk on Wide Bandgap Semiconductors, concluded successfully. Relying on its outstanding technological strength and remarkable market performance, Alkaidsemi successfully claimed two honors at the Expert Talk Aurora Awards Ceremony: the "Top 10 China SiC Device Fabless Enterprise Award" and the "SiC MOSFET Annual Excellent Product Award", earning authoritative industry recognition for its technical prowess. Meanwhile, the 2025 White Paper on the Research of Silicon Carbide (SiC) Device and Module Industry, in which Alkaidsemi participated as a compiling unit with in-depth contributions, was officially released at the conference.


The "Top 10 China SiC Device Fabless Enterprise Award" aims to recognize pioneering enterprises that focus on SiC device design and break industry bottlenecks through technological innovation. As a backbone force in China's SiC device design field, Alkaidsemi has always taken "high efficiency, low consumption + stability and reliability" as its core R&D goal. Through continuous optimization of key device parameters, the company has achieved multiple core technological breakthroughs: the invalid energy transmission loss has reached the industry's top energy efficiency level; the interference amplitude of circuit fluctuations has been significantly reduced through the optimization of the gate structure; at the same time, this structure has improved the thermal stability of the device, successfully overcoming the industry pain point of reduced device stability in high-temperature environments. In the market, Alkaidsemi's SiC device revenue and shipment volume surged in 2025, with its products widely adopted by leading customers in new energy vehicles, AI data centers, charging piles, photovoltaic energy storage and other fields, fully demonstrating the high reliability and market recognition of its products.



Alkaidsemi's fifth-generation 1200V SiC MOSFET, which won the "SiC MOSFET Annual Excellent Product Award", features an industry-leading low specific on-resistance, while simultaneously achieving extremely low junction capacitance and excellent anti-crosstalk characteristics. The synergy of these multiple advantages empowers various application scenarios. With its high-efficiency and stable performance, the product provides core power support for key fields such as new energy vehicles, AI data center power supply systems, charging piles, and photovoltaic energy storage, driving the downstream industries to achieve energy efficiency upgrading and reliable operation.



As an enterprise deeply engaged in the third-generation semiconductor field, Alkaidsemi actively participates in the construction of the industry ecosystem. In the newly released SiC industry white paper, Alkaidsemi combined its own technological exploration and practical experience to share in detail the latest technological progress, the layout of its full product series, and targeted innovative application solutions. At the same time, the company joined hands with upstream and downstream partners in the industrial chain to pool wisdom, put forward practical development suggestions and strategies for the pain points of industrial development, and inject strong impetus into China's third-generation semiconductor industry to break through technical barriers.


Going forward, Alkaidsemi will continue to take technological innovation as its core driving force, continuously enhance product competitiveness, deepen cooperation with industrial chain partners, and keep forging ahead in the wave of the development of the third-generation semiconductor industry, contributing more to the rise of China's semiconductor industry.