Against the backdrop of the booming development of the new energy and power electronics industries, application scenarios such as uninterruptible power supplies (UPS) in data centers, photovoltaic grid connected systems, energy storage stations, and new energy vehicle charging piles have put forward strict requirements for the performance of IGBT devices, including high power density, high efficiency conversion, high reliability operation, and cost optimization. Based on the independently developed 8-inch/12 inch compatible manufacturing process platform and combined with the technology iteration system, Alkaidsemi has successfully launched the third-generation IGBT technology platform (S3) and taken the lead in completing the industrial layout. Through testing and verification by multiple top customers in the field of new energy, the platform has achieved international leading levels in multiple core performance indicators, and has achieved technological superiority over international top enterprises in segmented application areas.
Technical Highlights: Comprehensive Evolution of Three Core Indicators
1
The conduction voltage drop Vce (sat) decreases by another 20%
Through cutting-edge semiconductor manufacturing processes and device structure optimization design, the platform has made significant progress in technical indicators: the current density has been increased by 40%, and the saturation conduction voltage drop (Vcesat) has been reduced by 20%. The above technological innovation achievements can significantly improve the operational efficiency of power electronic systems, significantly reduce system energy consumption and system volume, and thus create considerable economic benefits for users.
2
Reduce switch loss Eoff by 50%
Based on deep optimization of high-frequency application scenarios, the S3 series IGBT devices have achieved significant reduction in tail current and effective control of turn off losses through innovative design. With the "low gate charge+soft turn off" design, the 1200 V/75A device maintains extremely low conduction loss while reducing Eoff by 11% compared to the international leading enterprise * 7 series (25 ℃ Vcc=600V Vge=15V Rgon=8 Ω Rgoff=8 Ω), helping to improve system efficiency.
3
Power density increased by 50%
By optimizing the cellular structure, the current density has been increased by 25%, achieving a new industry benchmark of 1.82A/mm ² in the same package! Using the S3 technology platform as the core, provide higher power and smaller volume hardcore "core" power for data center power supply systems, photovoltaics, energy storage, and automotive charging!
Advanced technology, creating extraordinary performance
From the beginning of product design, Alkaidsemi has followed strict DFMEA standards and meticulously crafted every detail. In mass production management, utilizing the device overstress failure database ensures comprehensive product quality assurance. Advanced processes such as small cell size design and optimized Cge/Cies have injected powerful power into IGBT, achieving low conduction voltage drop Vcesat, low switching loss, high current density, and excellent EMI characteristics. These outstanding performances enable Alkaidsemi IGBT to operate stably and efficiently in complex power environments.
Performance benchmarking, seamless replacement
Taking the T-type three-level as an example, a simulation comparison is conducted using PLECS software and PLECS model
Simulation topology: T-shaped three-level
Simulation conditions: 15kW, 10% overload Vout=380V、PF=1、DC=800V、fsw=18kHz、 Air cooling.
Under standard operating conditions of 15kW, Alkaidsemi AK1BK2A040WHH relies on advanced semiconductor technology to achieve conduction losses comparable to similar products overseas; By optimizing the carrier design, its turn off loss is significantly lower than that of competitors. The combination of the two significantly reduces the overall loss, not only meeting the stringent requirements of industrial applications, but also achieving performance parity with similar overseas products through localized innovative technologies.
Reliable and stable quality
Alkaidsemi relies on a comprehensive lifecycle quality management system, from raw material inspection and production process Spc control to after-sales failure analysis and rapid response mechanism, to build a rigorous quality control network, ensuring that every IGBT product has high performance consistency and operational stability, and providing customers with reliable power electronics solutions.
Product family: 650 V~1400 V full coverage
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650 V：40 A -150A， We have delivered a large quantity of photovoltaic inverters, charging station modules, and household energy storage inverters to our top customers, with extremely high reliability.
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750 V：75A / 100A， Support string inverters with higher bus voltage and low power, as well as some small and medium-sized centralized inverters.
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1200 V: 40 A~140 A, TO-247-3L/4L, TO-247-Plus-3L/4L available in multiple packages, compatible with UPS and industrial motor drivers.
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1400 V：100 A / 140 A， The first batch in China to pass the 1000 hour high temperature reverse bias (HTRB) assessment, directly targeting the pain points of 1500 V photovoltaic systems.
Alkaidsemi IGBT S3 Platform——Higher power density, lower losses, and stronger reliability make each kilowatt more efficient and cost per watt more extreme, injecting "core" energy into new energy and industrial applications!
Contact us immediately and join hands to define the future of 'core' energy.
