Quality Management

2025-01-12

Technical Sharing | LFPAK and AKS PDFN5x6 Package Comparison
2025-01-05

Technical Sharing | Analysis of Voltage Stress during Gate Miller Platform Vibration
2024-12-13

LLC Resonant Converter Detailed Explanation (VI) | LLC Equivalent Circuit Analysis

29

2024-11

LLC Resonant Converter Detailed Explanation (V) | RLC Loop Frequency Domain Analysis

The series RLC circuit consists of a resistor, a capacitor, and an inductor connected in series on an AC power source, as shown in Figure 1.
22

2025-11

LLC Resonant Converter Detailed Explanation (IV) | Resonant Circuit Fundamentals

Due to its ability to achieve electrical isolation, high efficiency, high power density, low EMI, and other functions, LLC resonant converters are widely used in automotive and industrial applications. Due to its multimodal operation and complex design calculations, its equivalent circuit analysis is usually used.
15

2024-11

Detailed explanation of LLC resonant converter (Ⅲ) | Evolution of resonant converter

Due to the series-parallel converter (LCC structure), high cycle energy and high switching loss will occur in a wide input voltage range. In order to make the whole process work in ZVS mode, the LCC resonant cavity is changed into a double resonant network.
11

2024-11

Detailed explanation of LLC resonant converter (II) | Comparison of resonant topologies

The resonant converter takes the resonant circuit as the basic conversion unit. When the circuit resonates, the current or voltage periodically crosses the zero point, so that the switching device is turned on or off under the condition of zero voltage or zero current, so as to realize soft switching and reduce the switching loss.
08

2024-11

Detailed explanation of LLC resonant converter (I) | Introduction of resonant converter

In the traditional hard switching circuit, the switching loss is large, and with the increase of working frequency, the loss problem becomes more and more prominent, which limits the improvement of power conversion efficiency and the miniaturization of equipment.
18

2024-10

Technology Sharing | IGBT short circuit in the system and its protection

IGBT is composed of MOSFET and BJT. Compared with other high-power switching devices, IGBT has the advantages of low driving power, high current, no secondary breakdown effect and easy parallel connection. Therefore, IGBT is widely used in white goods, servo motors and new energy power generation systems.
20

2024-09

Technology Sharing | Loss Analysis of Three-phase Vienna PFC Power Devices

Three-phase Vienna PFC is a three-level PWM rectifier topology, which aims to improve the efficiency and power factor of power supply system. Because it needs few switching devices, the maximum voltage borne by a single power device is half of the output bus voltage, there is no need to set the driving dead time, and there is no bridge arm straight-through problem, which is widely used.
22

2024-08

Technology Sharing | Avalanche Characteristics of Power MOSFET

The avalanche of MOSFET mainly involves that under certain conditions (such as high voltage or high current), more electron-hole pairs are generated inside it through collision ionization, which leads to a sharp increase in current and affects the performance of the device. Avalanche characteristic is an important parameter to be considered in the design and application of MOSFET, because it is directly related to the safe operation and reliability of the device. ‌
07

2025-05

Technology Sharing | Application of multi-layer epitaxial technology super junction MOSFET

With the vigorous development of new energy, electric vehicles, artificial intelligence and other industries, the strong demand for power devices, especially super junction (SJ)MOSFET, has been driven to some extent. A new domestic semiconductor brand, represented by Alkaidsemi, launched a new G2.5 platform super junction MOSFET based on super junction multilayer epitaxy technology.
06

2024-08

Technology Sharing | Crosstalk characteristics of sic MOSFET

Compared with Si devices, the third generation wide band gap semiconductor material SiC has the advantages of faster switching speed, higher withstand voltage and better temperature characteristics, which correspondingly brings less loss, smaller volume of magnetic components in the system and higher power density.
02

2024-08

Technology Sharing | Analysis on the Influence of Flyback Synchronous Rectification Efficiency

As we all know, Synchronous Rectification, SR) is a new technology which uses power MOSFET with very low on-state resistance instead of rectifier diode to reduce the loss.
01

2024-08

Technology Sharing | Application of MOSFET in DC Brushless Motor Drive Circuit

Brushless motor has been widely used in various fields because of its advantages of high torque, long life and low noise. Its internal electronic winding can be regarded as an inductive coil.

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